document number: 94597 for technical questions within your region, please contact one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 2 x 6 a vs-hfa12pa120cpbf vishay semiconductors features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa12pa120cpbf is a state of the art center tap ultrafast recovery diode. empl oying the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. the vs-hfa12pa120cpbf has basic ratings of 1200 v and 6 a per leg continuous current. in addition to ultrafast re covery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a re ctifier with lower noise and significantly lower switching lo sses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexf red vs-hfa12pa120cpbf is ideally suited for applications in power supp lies and power conversion systems (such as inverters, converters, ups systems, and power factor corre ction circuits), motor drives, and many other similar applicat ions where high speed, high efficiency is needed. product summary package to-247ac i f(av) 2 x 6 a v r 1200 v v f at i f 3.0 v t rr (typ.) 26 ns t j max. 150 c diode variation single die to-247ac base common cathode common cathode 2 2 13 anode 1 anode 2 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current per leg i f t c = 100 c 6 a per device 12 single pulse forward current i fsm 80 maximum repetitive forward current i frm 24 maximum power dissipation p d t c = 25 c 62.5 w t c = 100 c 25 operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94597 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa12pa120cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 6 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 6 a - 2.7 3.0 i f = 12 a - 3.5 3.9 i f = 6 a, t j = 125 c - 2.4 2.8 maximum reverse leakage current i rm v r = v r rated - 0.26 5.0 a t j = 125 c, v r = 0.8 x v r rated - 110 500 junction capacitance c t v r = 200 v - 9.0 14 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 26 - ns t rr1 t j = 25 c i f = 6 a di f /dt = 200 a/s v r = 200 v -5380 t rr2 t j = 125 c - 87 130 peak recovery current i rrm1 t j = 25 c - 4.4 8.0 a i rrm2 t j = 125 c - 5.0 9.0 reverse recovery charge q rr1 t j = 25 c - 116 320 nc q rr2 t j = 125 c - 233 585 peak rate of fall of recovery current during t b di (rec)m /dt1 t j = 25 c - 180 - a/s di (rec)m /dt2 t j = 125 c - 100 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --2.0 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.50 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac (jedec) hfa12pa120c
document number: 94597 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa12pa120cpbf hexfred ? ultrafast soft recovery diode, 2 x 6 a vishay semiconductors fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junc tion capaci tance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.1 1 10 100 0 2 4 6 t = 150c t = 125c t = 25c j j j reverse current - i r (a) reverse voltage - v r (v) 0.01 0.1 1 10 100 1000 0 200 400 600 800 1000 1200 1400 125 c 100 c 25 c t = 150 c j reverse voltage - v r (v) junction capacitance - c t (pf) 1 10 100 1 1 0 100 1000 10000 t j = 150 c thermal impedance z thjc (c/w) t 1 , rectangular pulse duration (s) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94597 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa12pa120cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 6 a fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 20 30 40 50 60 70 80 90 100 110 100 1000 i f = 6 a i f = 4 a t rr - (ns) v r = 200 v t j = 125 c t j = 25 c di f /dt - (a/s) i rr - (a) 0 5 10 15 20 25 100 1000 di f /dt - (a/s) i f = 6 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c q rr - (nc) 0 200 400 600 800 1000 100 1000 i f = 6 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c di f /dt - (a/s) 10 100 1000 10 000 100 1000 v r = 200 v t j = 125 c t j = 25 c i f = 6 a i f = 4 a di (rec) m/dt - (a/s) di f /dt - (a/s)
document number: 94597 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa12pa120cpbf hexfred ? ultrafast soft recovery diode, 2 x 6 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94597 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa12pa120cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 6 a ordering information table 1 - vishay semiconductors product 2 - hexfred ? family 3 - electron irradiated 4 - current rating (12 = 12 a) 5 - pa = to-247ac device code 5 1 3 2 4 6 7 8 hf vs- a 12 pa 120 c pbf 6 7 - circuit configuration c = common cathode 8 - pbf = lead (pb)-free - voltage rating: (120 = 1200 v) links to related documents dimensions www.vishay.com/doc?95223 part marking information www.vishay.com/doc?95226
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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